SPring-8(高輝度光科学研究センター)との連携の論文

2009年

1. In situ positioning of a few hundred micrometer-sized cleaved surfaces for soft X-ray angle resolved photelectron spectroscopy by use of an optical microscope

Rev. Sci. Instrum. 80, 053901 (2009)

T. Muro, Y. Kato, T. Matsushita, T. Kinoshita, Y. Watanabe, A. Sekiyama, H. Sugiyama, M. Kimura, S. Komori, S. Suga, H. Okazaki and T. Yokoya.

2. Microstructures in directly bonded Si substrates

Solid-State Electronics 53, 837-840 (2009)

Y. Ohara, T. Ueda, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, S. Kimura, T. Sakata, H. Mori

2010年

1. Structural change of direct silicon bonding　substrates by interfacial oxide out-diffusion annealing

Thin Solid Films 518, S147-S150 (2010)

T. Kato, Y. Nakamura, J. Kikkawa, A. Sakai, E. Toyoda, K. Izunome, O. Nakatsuka,S. Zaima, Y. Imai, S. Kimura, O. Sakata

2. X-ray microdiffraction study on crystallinity of micron-Sized Ge films selectively grown on Si(001) substrates

ECS Trans. 33, 887 (2010)　

K. Ebihara, S. Harada, J. Kikkawa, Y. Nakamura, A. Sakai, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata

3. Ca-VI: A high-pressure phase of calcium above 158 GPa

Phys. Rev. B 81, 140106 -1 -4 (2010)

Y. Nakamoto, M. Sakata, K. Shimizu, H. Fujihisa, T. Matsuoka, Y. Ohishi, and T. Kikegawa

4. Magnetocapacitive effects in the Néel N-type ferrimagnet SmMnO3

Phys. Rev. B 82, 212403 (2010)

J.-S. Jung, A. Iyama, H. Nakamura, M. Mizumaki, N. Kawamura, Y. Wakabayashi, and T. Kimura

2011年

1. Nanometer-scale characterization technique for Si nanoelectric materials using synchrotron radiation microdiffraction

Key Eng. Mater. 470, 104 (2011)

S. Kimura, Y. Imai, O. Sakata, and A. Sakai 

2. Structural change during the formation of directly bonded silicon substrates

Key Eng. Mater. 470, 158 (2011)

T. Kato, T. Ueda, Y. Ohara, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, S. Zaima, E. Toyoda, K. Izunome, Y. Imai, S. Kimura, and O. Sakata

3. Microscopic structure of directly bonded silicon substrates

Key Eng. Mater. 470, 164 (2011)

T. Kato, Y. Ohara, T. Ueda, J. Kikkawa, Y. Nakamura, A. Sakai, O. Nakatsuka, M. Ogawa, S. Zaima, E. Toyoda, H. Isogai, T. Senda, K. Izunome, H. Tajiri, O. Sakata, and S. Kimura

4. Structural and electrical transport properties of FeHx under high pressures and low temperatures

High Pressure Research, vol.31, pp64-67 (2011)

T. Matsuoka, N. Hirao, Y. Ohishi, K. Shimizu, A. Machida and K. Aoki

5. Bottom-up realization of a porous metal–organic nanotubular assembly

Nature Materials (2011) doi:10.1038/nmat2963

K. Otsubo, Y. Wakabayashi, J. Ohara, S. Yamamoto, H. Matsuzaki, H. Okamoto, K. Nitta, T. Uruga & H. Kitagawa

6. X-ray microdiffraction investigation of crystallinity and strain relaxation in Ge thin lines selectively grown on Si(001) substrates

Solid-State Electron., in press (2011)

K. Ebihara, J. Kikkawa, Y. Nakamura, A. Saka, G. Wang, M. Caymax, Y. Imai, S. Kimura, and O. Sakata